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1
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- Richard Sun and Frank Luo
- Angstrom Sun Technologies Inc., Acton, MA 01720
- Robert L. DeLeon, Nehal S. Chokshi, Gary S. Tompa and James F. Garvey
- AMBP Tech Corporation, Amherst, New York 14228
- Harry Efstathiadis
- College of Nanoscale Science and Engineering, The University at
Albany-State University of New York, Albany, NY 12203
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2
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- Both film properties and device performance are affected by thin film
processing technique and parameters. Among them, low temperature
processing technique is always desirable.
- Laser assisted molecule beam deposition (LAMBD) technique offers
opportunity to deposit various films at low temperatures, even at room
temperature, which makes possible to deposit dielectric film on polymer
or other temperature sensitive substrates.
- Spectroscopic ellipsometry technique provides non-destructive method to
characterize and qualify the films processed with LAMBD.
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3
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4
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- LAMBD is a marriage of:
- MOLECULAR BEAM DEPOSITION
- and
- PULSED LASER DEPOSITION
- Can deposit on low T rated substrates such as polymers.
- Low Energy influx of the depositing species – no surface damage to
substrate.
- Thickness precisely controlled by number of laser pulses.
- Superior Surface Morphology to conventional PLD.
- LAMBD sources can be cheaply implemented directly in existing laser
deposition systems, providing new life to a dying technology.
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5
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6
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7
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- Processing Conditions
- 1. Laser energy: 100 mJ/pulse
- 2. O2 pressure: 12 psi
- 3. Substrate distance: 263 mm
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8
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9
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10
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- High K HfO2 films were successfully prepared with LAMBD technique.
- The films processed with LAMBD were characterized with variable angle
spectroscopic ellipsometer.
- It seems that film density increases with processing temperature.
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Notes
