Spectroscopic Ellipsometer IRSE

Infrared Spectroscopic Ellipsometer

Spectroscopic ellipsometry (SE) is a well-established optical technique for the characterization of bulk materials, thin films, coatings, both surface and embedded layers. The wavelength range implemented with such technique is always application dependent. The infrared (IR) wavelength range is of much interest since materials exhibit behavior which are very different from those observed in the ultra-violet(UV) and visible wavelength ranges. For example, most non-doped semiconductors are transparent; dielectrics have characteristic absorption bonds; metals or doped semiconductors exhibit Drude absorption tails etc. Therefore, InfraRed Spectroscopic Ellipsometry (IRSE) allows to characterize for structural (thickness, interface, surface roughness, contamination), optical (optical constants), electrical (conductivity) and also chemical information of materials.

  • Horizontal sample placement
  • Affordable, Low Cost
  • Compact design
  • Easy to use with Window based software; scientific mode for advanced users and operator mode for routine/daily operations
  • Variable Incident angles
  • User definable resolution
  • Fast measurement based on FTIR technique
  • Comprehensive optical constants database and model recipes
  • Advanced TFProbe Software allows user to define layers with NK table, dispersion or EMA mixture/composites with index grading, and surface/interface roughness...
  • Upgradable and reconfigurable with Various options and accessories
  • Michelson interferometer with continuous dynamic alignment for long-term stability
  • Long Lifetime Infrared Source
System Configuration:
  • Model: TFProbe IRSE
  • Light Source: Long Lifetime Polaris™ Infrared Source
  • Spectrometer:
    • Michelson interferometer Dual ports output
    • Ge on KBr beamsplitter
    • High-precision HeNe reference laser
    • Continuously variable iris aperture
    • BaF2 coated KBr windows
  • Variable Incident angle: 20 – 90 degree at 5-degree interval
  • Angle Change Mode: Manual with preset slots
  • Polarizing Optics: Motorized Grid IR Polarizers
  • Detector: TE-cooled DLaTGS detector with KBr window
  • Stage: High Precision Z stage with tilting adjustment
  • Sample Plate: 200mm diameter, Horizontal placement
  • Communication: USB 2.0
  • Computer: Intel i5 processor, 8GB ram and 500GB Hard Drive with Keyboard and Mouse
  • Monitor: 22” LCD Monitor
  • Software: TFProbe 3.3
  • Spectral range:                    350 - 7400 cm-1
  • Spectral Resolution:            0.5 - 32 cm-1
  • Wavelength Precision:        Better than 0.01 cm-1
  • Scanning Velocity:               0.158 – 6.28 cm/sec
  • Spot size:                              1 - 5 mm
  • Angle of incidence:             20° to 90°, 5o interval
  • Measurement time:            5 sec/site to several min, user definable
  • Measurement precision:    better than 1Å for Thermal SiO2/Si
  • Detector: MCT-A (400 – 11700cm-1); MCT-B (600 – 11700cm-1); MCT-C (800 – 12500cm-1)
  • Incident Angle: Motorized Goniometer for changing incident angle automatically at   0.01 degree
  • Sample Holder: up to 450mm size
  • Motorized mapping stage at X-Y or Rho-Theta to cover up to 450mm wafer size
  • Reflection and/or transmission measurement
  • Heating and Cooling Stage
  • Digital Vision with imaging functions
  • Focused beam set up for small area measurement
Function Table:
  • Work with Window based operating systems
  • User friendly and easy to use interface
  • Integrated all-in-one functions for Simulation, Hardware Configuration and Calibration, Data Acquisition, Regression and Graphics Presentation
  • Simulation on photometry and ellipsometry on spectroscopic, Variable Angle or combined parameters
  • Comprehensive Optical Constants database, over 300 sets of optical constants for various materials included
  • Unlimited layers in layer stack can be set up
  • Each Layer or film can be defined from NK table (Library database), dispersion, interface, surface roughness or composite mixture model (EMA, effective media approximation)
  • Capable to define inhomogeneous layer with linear, exponential, Gaussian etc profile
  • Various dispersion model available such as Cauchy, Sellmeier, Gaussian, Tauc-Lorentz, Drude IR, Exponential, model dielectric functions etc, plus user can add unlimited absorption bands into dispersion
  • Support Anisotropic layers with dispersion definition
  • EMA Model can be defined with 2 or 3 materials mixture with Bruggeman or Maxwell-Garnett, both component’s volume fraction and depolarization factors can be set as variable
  • Advanced regression control on single set or multiple sets data, incident angle, angle deviation, fitting range modification, backside reflection factors, weighted consideration on either ellipsometry parameters with Marquardt-Levenberg or Simplex algorithms
  • 2D and 3D graphic presentation
  • User level control with password protected levels
  • Support both CCD-based array or Scanning monochromator detecting system
  • Flexible recipe setup interface from simple measurement to one-click to results full recipe
  • Support and communicate with various type of CCD based array detector systems
  • Allow to acquire ellipsometry, reflection and transmission data if licensed
  • Allow for time series with fixed time step or continuous measurement which is suitable for real time monitoring and inline metrology applications
  • Advanced optical constants editor and mapping profile setup
  • Operating systems:  Win XP, Win Vista or Win 7(32Bit), Win 8(64bit), Win 10(64bit)
  • Functions: Simulation, Hardware Configuration and Calibration, Data Acquisition, and Regression
  • Application: Photometry and Ellipsometry
  • Bulk materials: Glasses, PET, Doped silicon
  • Silicon epitaxial layers:
    • doping profile
    • thin epilayers (< 1 um)
    • low contrast N-/N epilayers
  • Semiconductor epilayers (GaAs, Insb, SiC, SiGe, CdHgTe, …)
  • Dielectric films characterization
  • Silicon layers for FPD applications
  • Monitoring of a-Si:H process quality (CVD, ELA process)
  • Si-H and N:H relative content in SiN layers
  • ITO films: optical and electrical characterization
  • BPSG, PSG: boron and phosphorus concentration
  • Low-k materials: 
    • Organic low-k material.
      • Determine the thickness and optical constants
      • Calculate the carbon content (% C).
      • Determine the water content before and after annealing
    • SiOC:H: carbon content and porosity.
    • Porous SiO2: thickness, porosity, water content.
  • Trench, Vias, Recess and shallow trench isolations (STI)  
  • SOI Optical Waveguides: thickness measurements.
Interface Example:

Layer Stack Setup Interface:

Spectroscopic Ellipsometer Layer Stack Model Setup Interface

Optical Model Tree:


1. System configuration and Specifications subject to change without notice.

2. * Film property, surface quality and layer stack dependent

3. Customized system available for special applications

4. TFProbe is registered trademark of Angstrom Sun Technologies Inc.

5. MCT: HgCdTe, Mercury Cadmium Telluride

6. DTGS: Deuterated Triglycine Sulfate

7. DLaTGS: Deuterated Lanthanum α Alanine doped TriGlycine Sulphate